N-channel transistor 2SK2647, 4A, 4A, 200uA, 3.19 Ohms, TO-220, TO-220F15, 800V

N-channel transistor 2SK2647, 4A, 4A, 200uA, 3.19 Ohms, TO-220, TO-220F15, 800V

Quantity
Unit price
1-4
6.69$
5-24
6.34$
25-49
6.11$
50+
5.88$
Obsolete product, soon to be removed from the catalog
Out of stock

N-channel transistor 2SK2647, 4A, 4A, 200uA, 3.19 Ohms, TO-220, TO-220F15, 800V. ID (T=100°C): 4A. ID (T=25°C): 4A. Idss (max): 200uA. On-resistance Rds On: 3.19 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220F15. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 450pF. Channel type: N. Cost): 75pF. Drain-source protection: diode. Function: High Speed ​​Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 16A. Marking on the case: K2647. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. Quantity per case: 1. Td(off): 50 ns. Td(on): 20 ns. Technology: FAP-IIS Series MOS-FET. Temperature: +150°C. Trr Diode (Min.): 450 ns. Type of transistor: MOSFET. Vgs(th) max.: 4.5V. Vgs(th) min.: 3.5V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2647
30 parameters
ID (T=100°C)
4A
ID (T=25°C)
4A
Idss (max)
200uA
On-resistance Rds On
3.19 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220F15
Voltage Vds(max)
800V
Assembly/installation
PCB through-hole mounting
C(in)
450pF
Channel type
N
Cost)
75pF
Drain-source protection
diode
Function
High Speed ​​Switching
G-S Protection
no
Gate/source voltage Vgs
30 v
IDss (min)
10uA
Id(imp)
16A
Marking on the case
K2647
Number of terminals
3
Pd (Power Dissipation, Max)
40W
Quantity per case
1
Td(off)
50 ns
Td(on)
20 ns
Technology
FAP-IIS Series MOS-FET
Temperature
+150°C
Trr Diode (Min.)
450 ns
Type of transistor
MOSFET
Vgs(th) max.
4.5V
Vgs(th) min.
3.5V
Original product from manufacturer
Fuji Electric