N-channel transistor 2SK2615, 1.5A, 2A, 100uA, 0.33 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( 2-5K1B ), 60V

N-channel transistor 2SK2615, 1.5A, 2A, 100uA, 0.33 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( 2-5K1B ), 60V

Quantity
Unit price
1-4
1.43$
5-24
1.18$
25-49
1.09$
50+
1.01$
Quantity in stock: 25

N-channel transistor 2SK2615, 1.5A, 2A, 100uA, 0.33 Ohms, SOT-89 4-Pin ( 3+Tab ), SOT-89 ( 2-5K1B ), 60V. ID (T=100°C): 1.5A. ID (T=25°C): 2A. Idss (max): 100uA. On-resistance Rds On: 0.33 Ohms. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89 ( 2-5K1B ). Voltage Vds(max): 60V. Assembly/installation: surface-mounted component (SMD). C(in): 150pF. Channel type: N. Cost): 70pF. Drain-source protection: diode. Function: Field Effect Transistor. G-S Protection: Suppressor. Gate/source voltage Vgs: 20V. Id(imp): 6A. Marking on the case: ZA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. Quantity per case: 1. RoHS: yes. Td(off): 150 ns. Td(on): 30 ns. Technology: MOS Type (L2.TT.MOSV). Temperature: +150°C. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Vgs(th) min.: 0.8V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2615
29 parameters
ID (T=100°C)
1.5A
ID (T=25°C)
2A
Idss (max)
100uA
On-resistance Rds On
0.33 Ohms
Housing
SOT-89 4-Pin ( 3+Tab )
Housing (according to data sheet)
SOT-89 ( 2-5K1B )
Voltage Vds(max)
60V
Assembly/installation
surface-mounted component (SMD)
C(in)
150pF
Channel type
N
Cost)
70pF
Drain-source protection
diode
Function
Field Effect Transistor
G-S Protection
Suppressor
Gate/source voltage Vgs
20V
Id(imp)
6A
Marking on the case
ZA
Number of terminals
3
Pd (Power Dissipation, Max)
1.5W
Quantity per case
1
RoHS
yes
Td(off)
150 ns
Td(on)
30 ns
Technology
MOS Type (L2.TT.MOSV)
Temperature
+150°C
Trr Diode (Min.)
100 ns
Type of transistor
MOSFET
Vgs(th) min.
0.8V
Original product from manufacturer
Toshiba