N-channel transistor 2SK2605, 5A, 100uA, 1.9 Ohms, TO-220FP, TO-220F, 800V. ID (T=25°C): 5A. Idss (max): 100uA. On-resistance Rds On: 1.9 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 800V. Assembly/installation: PCB through-hole mounting. C(in): 1800pF. Channel type: N. Cost): 105pF. Drain-source protection: diode. Function: High Speed, H.V. G-S Protection: yes. Gate/source voltage Vgs: 30 v. Id(imp): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. Quantity per case: 1. Td(off): 140 ns. Td(on): 80 ns. Technology: Field Effect (TT-MOSIII). Temperature: +150°C. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31