N-channel transistor 2SK2507, 25A, 100uA, 0.046 Ohms, TO-220FP, TO-220F, 50V

N-channel transistor 2SK2507, 25A, 100uA, 0.046 Ohms, TO-220FP, TO-220F, 50V

Quantity
Unit price
1-4
2.87$
5-24
2.49$
25-49
2.33$
50+
2.17$
Quantity in stock: 22

N-channel transistor 2SK2507, 25A, 100uA, 0.046 Ohms, TO-220FP, TO-220F, 50V. ID (T=25°C): 25A. Idss (max): 100uA. On-resistance Rds On: 0.046 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 50V. Assembly/installation: PCB through-hole mounting. C(in): 900pF. Channel type: N. Conditioning unit: 50. Conditioning: plastic tube. Cost): 130pF. Drain-source protection: diode. Function: Yfs--8-16S. G-S Protection: yes. Gate/source voltage Vgs: 20V. IDss (min): 10uA. Id(imp): 75A. Marking on the case: K2507. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Quantity per case: 1. RoHS: yes. Td(off): 110 ns. Td(on): 25 ns. Technology: Field Effect MOS Type(L2-TT-MOSV). Temperature: +150°C. Type of transistor: MOSFET. Vgs(th) min.: 0.8V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2507
30 parameters
ID (T=25°C)
25A
Idss (max)
100uA
On-resistance Rds On
0.046 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
50V
Assembly/installation
PCB through-hole mounting
C(in)
900pF
Channel type
N
Conditioning unit
50
Conditioning
plastic tube
Cost)
130pF
Drain-source protection
diode
Function
Yfs--8-16S
G-S Protection
yes
Gate/source voltage Vgs
20V
IDss (min)
10uA
Id(imp)
75A
Marking on the case
K2507
Number of terminals
3
Pd (Power Dissipation, Max)
30W
Quantity per case
1
RoHS
yes
Td(off)
110 ns
Td(on)
25 ns
Technology
Field Effect MOS Type(L2-TT-MOSV)
Temperature
+150°C
Type of transistor
MOSFET
Vgs(th) min.
0.8V
Original product from manufacturer
Toshiba