N-channel transistor 2SK2480, 3A, 100uA, 3.2 Ohms, TO-220FP, TO-220F, 900V

N-channel transistor 2SK2480, 3A, 100uA, 3.2 Ohms, TO-220FP, TO-220F, 900V

Quantity
Unit price
1-4
8.35$
5-24
7.56$
25-49
6.97$
50+
6.52$
Quantity in stock: 12

N-channel transistor 2SK2480, 3A, 100uA, 3.2 Ohms, TO-220FP, TO-220F, 900V. ID (T=25°C): 3A. Idss (max): 100uA. On-resistance Rds On: 3.2 Ohms. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 900pF. Channel type: N. Cost): 130pF. Drain-source protection: diode. Function: High-Voltage Switching Applications. G-S Protection: no. Gate/source voltage Vgs: 30 v. Id(imp): 12A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Quantity per case: 1. RoHS: yes. Td(off): 63 ns. Td(on): 17 ns. Technology: MOSFET Transistor. Temperature: +150°C. Trr Diode (Min.): 650 ns. Type of transistor: MOSFET. Vgs(th) max.: 3.5V. Vgs(th) min.: 2.5V. Original product from manufacturer: Nec. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2480
28 parameters
ID (T=25°C)
3A
Idss (max)
100uA
On-resistance Rds On
3.2 Ohms
Housing
TO-220FP
Housing (according to data sheet)
TO-220F
Voltage Vds(max)
900V
Assembly/installation
PCB through-hole mounting
C(in)
900pF
Channel type
N
Cost)
130pF
Drain-source protection
diode
Function
High-Voltage Switching Applications
G-S Protection
no
Gate/source voltage Vgs
30 v
Id(imp)
12A
Number of terminals
3
Pd (Power Dissipation, Max)
35W
Quantity per case
1
RoHS
yes
Td(off)
63 ns
Td(on)
17 ns
Technology
MOSFET Transistor
Temperature
+150°C
Trr Diode (Min.)
650 ns
Type of transistor
MOSFET
Vgs(th) max.
3.5V
Vgs(th) min.
2.5V
Original product from manufacturer
Nec