N-channel transistor 2SK2314, 27A, 100uA, 0.09 Ohms, TO-220, TO-220AB, 100V

N-channel transistor 2SK2314, 27A, 100uA, 0.09 Ohms, TO-220, TO-220AB, 100V

Quantity
Unit price
1-4
1.80$
5-24
1.53$
25-49
1.37$
50+
1.25$
Quantity in stock: 19

N-channel transistor 2SK2314, 27A, 100uA, 0.09 Ohms, TO-220, TO-220AB, 100V. ID (T=25°C): 27A. Idss (max): 100uA. On-resistance Rds On: 0.09 Ohms. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. Assembly/installation: PCB through-hole mounting. C(in): 1100pF. Channel type: N. Cost): 180pF. Drain-source protection: diode. Function: Car electronics. G-S Protection: yes. Gate/source voltage Vgs: 20V. Id(imp): 108A. Marking on the case: K2314. Number of terminals: 3. Operating temperature: -50...+150°C. Pd (Power Dissipation, Max): 75W. Quantity per case: 1. RoHS: yes. Spec info: ESD Protected--2000V min. Td(off): 140us. Td(on): 30us. Technology: Power Field-Effect Transistor. Trr Diode (Min.): 155 ns. Type of transistor: MOSFET. Vgs(th) min.: 0.8V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK2314
29 parameters
ID (T=25°C)
27A
Idss (max)
100uA
On-resistance Rds On
0.09 Ohms
Housing
TO-220
Housing (according to data sheet)
TO-220AB
Voltage Vds(max)
100V
Assembly/installation
PCB through-hole mounting
C(in)
1100pF
Channel type
N
Cost)
180pF
Drain-source protection
diode
Function
Car electronics
G-S Protection
yes
Gate/source voltage Vgs
20V
Id(imp)
108A
Marking on the case
K2314
Number of terminals
3
Operating temperature
-50...+150°C
Pd (Power Dissipation, Max)
75W
Quantity per case
1
RoHS
yes
Spec info
ESD Protected--2000V min
Td(off)
140us
Td(on)
30us
Technology
Power Field-Effect Transistor
Trr Diode (Min.)
155 ns
Type of transistor
MOSFET
Vgs(th) min.
0.8V
Original product from manufacturer
Toshiba