N-channel transistor 2SK1489, 21F1B, 1 kV. Housing: 21F1B. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 1 kV. Ciss Gate Capacitance [pF]: 2000pF. Component family: MOSFET, N-MOS. Configuration: PCB through-hole mounting. Drain current Id (A) @ 25°C: 12A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1 Ohms @ 6A. Gate breakdown voltage Ugs [V]: 3.5V. Manufacturer's marking: 2SK1489. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 200W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 500 ns. Switch-on time ton [nsec.]: 140 ns. Original product from manufacturer: Toshiba. Quantity in stock updated on 11/02/2025, 23:36