N-channel transistor 2SK1461, 2A, 5A, 1mA, 2.8 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3BP, 900V. ID (T=100°C): 2A. ID (T=25°C): 5A. Idss (max): 1mA. On-resistance Rds On: 2.8 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3BP. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 700pF. Channel type: N. Cost): 300pF. Drain-source protection: yes. Function: N MOSFET transistor. G-S Protection: no. Gate/emitter voltage VGE(th) min.: 2V. Gate/emitter voltage VGE(th)max.: 3V. Gate/source voltage Vgs: 30 v. IDss (min): -. Id(imp): 10A. Marking on the case: K1461. Operating temperature: -...+150°C. Pd (Power Dissipation, Max): 120W. Quantity per case: 1. Td(off): 200 ns. Td(on): 15 ns. Technology: V-MOS, S-L. Type of transistor: MOSFET. Original product from manufacturer: Sanyo. Quantity in stock updated on 10/31/2025, 09:31