N-channel transistor 2SK1217, 8A, 500uA, 1.5 Ohms, TO-3PF (SOT399, 2-16E3A), TO-3PF, 900V. ID (T=25°C): 8A. Idss (max): 500uA. On-resistance Rds On: 1.5 Ohms. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Voltage Vds(max): 900V. Assembly/installation: PCB through-hole mounting. C(in): 1400pF. Channel type: N. Cost): 200pF. Drain-source protection: diode. Function: Low Driving Power High Speed Switching. G-S Protection: no. Gate/source voltage Vgs: 30 v. IDss (min): 10uA. Id(imp): 23A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 100W. Quantity per case: 1. RoHS: yes. Td(off): 300 ns. Td(on): 50 ns. Technology: V-MOS. Trr Diode (Min.): 1000 ns. Type of transistor: MOSFET. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V. Original product from manufacturer: Fuji Electric. Quantity in stock updated on 10/31/2025, 09:31