N-channel transistor 2SK1213, 8A, 300uA, 0.95 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 600V

N-channel transistor 2SK1213, 8A, 300uA, 0.95 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 600V

Quantity
Unit price
1-4
8.37$
5-9
7.75$
10-24
6.75$
25+
6.21$
Quantity in stock: 1

N-channel transistor 2SK1213, 8A, 300uA, 0.95 Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 600V. ID (T=25°C): 8A. Idss (max): 300uA. On-resistance Rds On: 0.95 Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 600V. Assembly/installation: PCB through-hole mounting. C(in): 1400pF. Channel type: N. Cost): 250pF. Drain-source protection: diode. Function: N MOSFET transistor. G-S Protection: no. Gate/source voltage Vgs: 20V. Id(imp): 24A. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 125W. Quantity per case: 1. Td(off): 85 ns. Td(on): 40 ns. Technology: V-MOS-L. Trr Diode (Min.): 460 ns. Type of transistor: MOSFET. Vgs(th) min.: 1.5V. Original product from manufacturer: Toshiba. Quantity in stock updated on 10/31/2025, 09:31

Technical documentation (PDF)
2SK1213
26 parameters
ID (T=25°C)
8A
Idss (max)
300uA
On-resistance Rds On
0.95 Ohms
Housing
TO-3P ( TO-218 SOT-93 )
Housing (according to data sheet)
TO-3P
Voltage Vds(max)
600V
Assembly/installation
PCB through-hole mounting
C(in)
1400pF
Channel type
N
Cost)
250pF
Drain-source protection
diode
Function
N MOSFET transistor
G-S Protection
no
Gate/source voltage Vgs
20V
Id(imp)
24A
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
125W
Quantity per case
1
Td(off)
85 ns
Td(on)
40 ns
Technology
V-MOS-L
Trr Diode (Min.)
460 ns
Type of transistor
MOSFET
Vgs(th) min.
1.5V
Original product from manufacturer
Toshiba