N-channel transistor 2PG011, 40A, TO-220FP, TO-220D-A1, 540V

N-channel transistor 2PG011, 40A, TO-220FP, TO-220D-A1, 540V

Quantity
Unit price
1-4
8.72$
5-9
7.64$
10-19
6.80$
20+
6.17$
Quantity in stock: 6

N-channel transistor 2PG011, 40A, TO-220FP, TO-220D-A1, 540V. Ic(T=100°C): 40A. Housing: TO-220FP. Housing (according to data sheet): TO-220D-A1. Collector/emitter voltage Vceo: 540V. Assembly/installation: PCB through-hole mounting. C(in): 1200pF. CE diode: no. Channel type: N. Collector current: 40A. Cost): 125pF. Function: VGE(th) VCE=10V, IC=1mA 3.0V...5.5V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5.5V. Gate/emitter voltage VGE: 30 v. Germanium diode: no. Ic(pulse): 230A. Maximum saturation voltage VCE(sat): 2.5V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Saturation voltage VCE(sat): 1.95V. Spec info: High-speed switching--tf=185ns (typ). Td(off): 200 ns. Td(on): 75 ns. Original product from manufacturer: Panasonic. Quantity in stock updated on 10/31/2025, 07:35

Technical documentation (PDF)
2PG011
26 parameters
Ic(T=100°C)
40A
Housing
TO-220FP
Housing (according to data sheet)
TO-220D-A1
Collector/emitter voltage Vceo
540V
Assembly/installation
PCB through-hole mounting
C(in)
1200pF
CE diode
no
Channel type
N
Collector current
40A
Cost)
125pF
Function
VGE(th) VCE=10V, IC=1mA 3.0V...5.5V
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
5.5V
Gate/emitter voltage VGE
30 v
Germanium diode
no
Ic(pulse)
230A
Maximum saturation voltage VCE(sat)
2.5V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
40W
RoHS
yes
Saturation voltage VCE(sat)
1.95V
Spec info
High-speed switching--tf=185ns (typ)
Td(off)
200 ns
Td(on)
75 ns
Original product from manufacturer
Panasonic