N-channel transistor 2PG001, 30A, TO-220FP, TO-220D-A1, 300V

N-channel transistor 2PG001, 30A, TO-220FP, TO-220D-A1, 300V

Quantity
Unit price
1-4
12.27$
5-9
11.36$
10-24
10.26$
25+
9.59$
Quantity in stock: 5

N-channel transistor 2PG001, 30A, TO-220FP, TO-220D-A1, 300V. Ic(T=100°C): 30A. Housing: TO-220FP. Housing (according to data sheet): TO-220D-A1. Collector/emitter voltage Vceo: 300V. Assembly/installation: PCB through-hole mounting. C(in): 580pF. CE diode: no. Channel type: N. Collector current: 30A. Cost): 86pF. Function: Plasma display driver. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 5.5V. Gate/emitter voltage VGE: 30 v. Germanium diode: no. Ic(pulse): 60.4k Ohms. Maximum saturation voltage VCE(sat): 2.5V. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 40W. RoHS: yes. Saturation voltage VCE(sat): 2V. Spec info: High speed hall time--tf=200nS(typ). Td(off): 120ns. Td(on): 87 ns. Original product from manufacturer: Panasonic. Quantity in stock updated on 10/31/2025, 07:35

Technical documentation (PDF)
2PG001
26 parameters
Ic(T=100°C)
30A
Housing
TO-220FP
Housing (according to data sheet)
TO-220D-A1
Collector/emitter voltage Vceo
300V
Assembly/installation
PCB through-hole mounting
C(in)
580pF
CE diode
no
Channel type
N
Collector current
30A
Cost)
86pF
Function
Plasma display driver
Gate/emitter voltage VGE(th) min.
3V
Gate/emitter voltage VGE(th)max.
5.5V
Gate/emitter voltage VGE
30 v
Germanium diode
no
Ic(pulse)
60.4k Ohms
Maximum saturation voltage VCE(sat)
2.5V
Number of terminals
3
Operating temperature
-55...+150°C
Pd (Power Dissipation, Max)
40W
RoHS
yes
Saturation voltage VCE(sat)
2V
Spec info
High speed hall time--tf=200nS(typ)
Td(off)
120ns
Td(on)
87 ns
Original product from manufacturer
Panasonic