N-channel transistor 2N7002T1-E3, SOT-23, 60V

N-channel transistor 2N7002T1-E3, SOT-23, 60V

Quantity
Unit price
1-99
0.20$
100+
0.12$
Quantity in stock: 1704

N-channel transistor 2N7002T1-E3, SOT-23, 60V. Housing: SOT-23. Housing (JEDEC standard): -. Drain-source voltage Uds [V]: 60V. Ciss Gate Capacitance [pF]: 50pF. Component family: MOSFET, N-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: 0.115A. Drain current through resistor Rds [Ohm] @ Ids [A]: 13.5 Ohms @ 0.05A. Gate breakdown voltage Ugs [V]: 2.5V. Manufacturer's marking: 72. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 0.3W. Number of terminals: 3. RoHS: yes. Switch-off delay tf[nsec.]: 20 ns. Switch-on time ton [nsec.]: 20 ns. Original product from manufacturer: Vishay (siliconix). Quantity in stock updated on 11/01/2025, 19:07

Technical documentation (PDF)
2N7002T1-E3
16 parameters
Housing
SOT-23
Drain-source voltage Uds [V]
60V
Ciss Gate Capacitance [pF]
50pF
Component family
MOSFET, N-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
0.115A
Drain current through resistor Rds [Ohm] @ Ids [A]
13.5 Ohms @ 0.05A
Gate breakdown voltage Ugs [V]
2.5V
Manufacturer's marking
72
Max temperature
+150°C.
Maximum dissipation Ptot [W]
0.3W
Number of terminals
3
RoHS
yes
Switch-off delay tf[nsec.]
20 ns
Switch-on time ton [nsec.]
20 ns
Original product from manufacturer
Vishay (siliconix)