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Semiconductors Diodes Standard and Rectifier Diodes

MURS320T3G

MURS320T3G
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.65$ 0.65$
10 - 24 0.62$ 0.62$
25 - 49 0.60$ 0.60$
50 - 99 0.59$ 0.59$
100 - 100 0.58$ 0.58$
Quantity U.P
1 - 9 0.65$ 0.65$
10 - 24 0.62$ 0.62$
25 - 49 0.60$ 0.60$
50 - 99 0.59$ 0.59$
100 - 100 0.58$ 0.58$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 100
Set of 1

MURS320T3G. Forward current (AV): 3A. IFSM: 75A. Housing: DO-214. Housing (according to data sheet): SMC DO-214AB ( 6.8x5.9mm ). VRRM: 200V. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Function: Ultrafast Power Rectifiers. Note: screen printing/CMS code U3D. MRI (max): 150uA. MRI (min): 5uA. Number of terminals: 2. Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.875V. Forward voltage Vf (min): 0.71V. Original product from manufacturer Taiwan Semiconductor. Quantity in stock updated on 01/07/2025, 11:25.

Technical documentation

Equivalent products :

Quantity in stock : 1148
MBRS360T3G

MBRS360T3G

Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 40...
MBRS360T3G
Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V
MBRS360T3G
Forward current (AV): 3A. IFSM: 80A. Housing: DO-214. Housing (according to data sheet): SMC CASE 403AC ( 7.15x6.25mm ). VRRM: 60V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky rectifier diode. Marking on the case: B36. Equivalents: Vishay VS-MBRS360-M3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Vf 0.74V/3A, (iF=3.0A, TJ=25°C). Assembly/installation: surface-mounted component (SMD). Operating temperature: -65...+125°C. Threshold voltage Vf (max): 0.74V. Forward voltage Vf (min): 0.74V
Set of 1
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$
Quantity in stock : 778
SS34-E3-57T

SS34-E3-57T

Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (...
SS34-E3-57T
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V
SS34-E3-57T
Forward current (AV): 3A. IFSM: 100A. Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. VRRM: 40V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Surface Mount. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. Number of terminals: 2. RoHS: yes. Spec info: Ifsm 100Ap (t=8.3ms). Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V
Set of 1
0.43$ VAT incl.
(0.43$ excl. VAT)
0.43$

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