Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.43$ | 0.43$ |
10 - 24 | 0.41$ | 0.41$ |
25 - 49 | 0.38$ | 0.38$ |
50 - 99 | 0.36$ | 0.36$ |
100 - 249 | 0.35$ | 0.35$ |
250 - 499 | 0.31$ | 0.31$ |
500 - 818 | 0.29$ | 0.29$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.43$ | 0.43$ |
10 - 24 | 0.41$ | 0.41$ |
25 - 49 | 0.38$ | 0.38$ |
50 - 99 | 0.36$ | 0.36$ |
100 - 249 | 0.35$ | 0.35$ |
250 - 499 | 0.31$ | 0.31$ |
500 - 818 | 0.29$ | 0.29$ |
SS34-E3-57T. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 100A. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms). Quantity in stock updated on 25/12/2024, 05:25.
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