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SS34-E3-57T

SS34-E3-57T
Quantity excl. VAT VAT incl.
1 - 9 0.43$ 0.43$
10 - 24 0.41$ 0.41$
25 - 49 0.38$ 0.38$
50 - 99 0.36$ 0.36$
100 - 249 0.35$ 0.35$
250 - 499 0.31$ 0.31$
500 - 818 0.29$ 0.29$
Quantity U.P
1 - 9 0.43$ 0.43$
10 - 24 0.41$ 0.41$
25 - 49 0.38$ 0.38$
50 - 99 0.36$ 0.36$
100 - 249 0.35$ 0.35$
250 - 499 0.31$ 0.31$
500 - 818 0.29$ 0.29$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 818
Set of 1

SS34-E3-57T. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 100A. MRI (max): 20mA. MRI (min): 500uA. Marking on the case: SS34. Equivalents: SS34-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMC) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.5V. Forward voltage Vf (min): 0.5V. VRRM: 40V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms). Quantity in stock updated on 25/12/2024, 05:25.

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