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MOSFET transistor HGTG40N60B3

MOSFET transistor HGTG40N60B3
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Quantity excl. VAT VAT incl.
1 - 1 15.64$ 15.64$
2 - 2 14.85$ 14.85$
3 - 4 14.54$ 14.54$
5 - 9 14.07$ 14.07$
10 - 14 13.76$ 13.76$
15 - 19 13.29$ 13.29$
20 - 30 12.82$ 12.82$
Quantity U.P
1 - 1 15.64$ 15.64$
2 - 2 14.85$ 14.85$
3 - 4 14.54$ 14.54$
5 - 9 14.07$ 14.07$
10 - 14 13.76$ 13.76$
15 - 19 13.29$ 13.29$
20 - 30 12.82$ 12.82$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 30
Set of 1

MOSFET transistor HGTG40N60B3. MOSFET transistor. CE diode: no. Channel type: N-P. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Germanium diode: no. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 47 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Original product from manufacturer Fairchild. Quantity in stock updated on 02/06/2025, 11:25.

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