MOSFET transistor HGTG40N60B3. Assembly/installation: PCB through-hole mounting. CE diode: no. Channel type: N-P. Collector/emitter voltage Vceo: 600V. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Gate/emitter voltage VGE: 20V. Germanium diode: no. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Housing: TO-247. Number of terminals: 3. Operating temperature: -55...+150°C. Pd (Power Dissipation, Max): 290W. RoHS: yes. Saturation voltage VCE(sat): 1.4V. Td(off): 170 ns. Td(on): 47 ns. Original product from manufacturer: Fairchild. Quantity in stock updated on 10/31/2025, 09:29