Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 15.64$ | 15.64$ |
2 - 2 | 14.85$ | 14.85$ |
3 - 4 | 14.54$ | 14.54$ |
5 - 9 | 14.07$ | 14.07$ |
10 - 14 | 13.76$ | 13.76$ |
15 - 19 | 13.29$ | 13.29$ |
20 - 30 | 12.82$ | 12.82$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 15.64$ | 15.64$ |
2 - 2 | 14.85$ | 14.85$ |
3 - 4 | 14.54$ | 14.54$ |
5 - 9 | 14.07$ | 14.07$ |
10 - 14 | 13.76$ | 13.76$ |
15 - 19 | 13.29$ | 13.29$ |
20 - 30 | 12.82$ | 12.82$ |
MOSFET transistor HGTG40N60B3. MOSFET transistor. CE diode: no. Channel type: N-P. Function: Ic 70A @ 25°C, 40A @ 110°C, Icm 330A (pulsed). Germanium diode: no. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 47 ns. Housing: TO-247. Housing (according to data sheet): TO-247 ( AC ) MOS-N-IGBT. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Original product from manufacturer Fairchild. Quantity in stock updated on 02/06/2025, 11:25.
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