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Semiconductors Transistors N-P MOSFET transistor pair

MOSFET transistor FDS8958A

MOSFET transistor FDS8958A
[TITLE]
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 1.04$ 1.04$
5 - 9 0.98$ 0.98$
10 - 24 0.93$ 0.93$
25 - 49 0.88$ 0.88$
50 - 99 0.86$ 0.86$
100 - 249 0.84$ 0.84$
250 - 814 0.80$ 0.80$
Quantity U.P
1 - 4 1.04$ 1.04$
5 - 9 0.98$ 0.98$
10 - 24 0.93$ 0.93$
25 - 49 0.88$ 0.88$
50 - 99 0.86$ 0.86$
100 - 249 0.84$ 0.84$
250 - 814 0.80$ 0.80$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 814
Set of 1

MOSFET transistor FDS8958A. MOSFET transistor. Channel type: N-P. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.028 Ohms (Q1), 0.052 Ohms (Q2). Quantity in stock updated on 14/04/2025, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 44
IRF7319

IRF7319

MOSFET transistor. Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power ...
IRF7319
MOSFET transistor. Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Note: ( = P23AF 4532 SMD ). Note: Rds-on 0.029 Ohms / 0.058 Ohms
IRF7319
MOSFET transistor. Channel type: N-P. Marking on the case: F7319. Number of terminals: 8. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: N&P-HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Note: ( = P23AF 4532 SMD ). Note: Rds-on 0.029 Ohms / 0.058 Ohms
Set of 1
1.15$ VAT incl.
(1.15$ excl. VAT)
1.15$
Quantity in stock : 2501
FDS8958B

FDS8958B

MOSFET transistor. C(in): 760pF. Cost): 155pF. Channel type: N-P. IDss (min): 1uA. Number of termina...
FDS8958B
MOSFET transistor. C(in): 760pF. Cost): 155pF. Channel type: N-P. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.026 Ohms (Q1), 0.051 Ohms (Q2). Drain-source protection : yes. G-S Protection: no
FDS8958B
MOSFET transistor. C(in): 760pF. Cost): 155pF. Channel type: N-P. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1uA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: pair of complementary N-channel and P-channel MOSFET transistors. Housing: SO. Housing (according to data sheet): SO-8. Quantity per case: 2. Function: Rds-on 0.026 Ohms (Q1), 0.051 Ohms (Q2). Drain-source protection : yes. G-S Protection: no
Set of 1
1.88$ VAT incl.
(1.88$ excl. VAT)
1.88$

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DC voltage: 25V. Capacitance: 220uF. Diameter: 8mm. Lifespan: 5000 hours. Lenght: 11.5mm. Impedance:...
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FDS6679AZ

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