MJE200G

Quantity	excl. VAT	VAT incl.
1 - 4	1.77$	1.77$
5 - 9	1.68$	1.68$
10 - 24	1.60$	1.60$
25 - 32	1.51$	1.51$

Quantity	U.P
1 - 4	1.77$	1.77$
5 - 9	1.68$	1.68$
10 - 24	1.60$	1.60$
25 - 32	1.51$	1.51$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 32

Set of 1

MJE200G. Cost): 80pF. Quantity per case: 1. Semiconductor material: silicon. FT: 65MHz. Max hFE gain: 180. Minimum hFE gain: 45. Collector current: 5A. Pd (Power Dissipation, Max): 15W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-225. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 25V. Saturation voltage VCE(sat): 0.3V. Maximum saturation voltage VCE(sat): 1.8V. Collector/emitter voltage Vceo: 40V. Vebo: 8V. Spec info: complementary transistor (pair) MJE210. Housing: TO-126 (TO-225, SOT-32). BE diode: no. CE diode: no. Quantity in stock updated on 15/01/2025, 19:25.

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Delivery in 2-3 days, with postal tracking!