KBU8M

Quantity	excl. VAT	VAT incl.
1 - 4	0.96$	0.96$
5 - 9	0.91$	0.91$
10 - 24	0.86$	0.86$
25 - 49	0.81$	0.81$
50 - 85	0.79$	0.79$

Quantity	U.P
1 - 4	0.96$	0.96$
5 - 9	0.91$	0.91$
10 - 24	0.86$	0.86$
25 - 49	0.81$	0.81$
50 - 85	0.79$	0.79$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 85

Set of 1

KBU8M. Quantity per case: 4. Dielectric structure: Diode bridge. Semiconductor material: silicon. Forward current (AV): 8A. IFSM: 200A. MRI (max): 500uA. MRI (min): 5uA. Equivalents: KBU8M, KBU807. Number of terminals: 4. Pitch: 5.08x5.08mm. Dimensions: 21.5x18.3x3.4mm. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--200Ap (t=8.3ms), IFSM--180Ap (t=10ms). Quantity in stock updated on 24/12/2024, 00:25.

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Delivery in 2-3 days, with postal tracking!