IXFA130N10T2

IXFA130N10T2. C(in): 6600pF. Cost): 640pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 300A. ID (T=25°C): 130A. Idss (max): 500uA. IDss (min): 10uA. Number of terminals: 2. Pd (Power Dissipation, Max): 360W. On-resistance Rds On: 0.01 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 24 ns. Td(on): 16 ns. Technology: TrenchT2 HiPerFet Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): TO-263. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4.5V. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/01/2025, 06:25.