IRLR3110ZPBF

Quantity	excl. VAT	VAT incl.
1 - 4	2.53$	2.53$
5 - 9	2.40$	2.40$
10 - 24	2.27$	2.27$
25 - 49	2.15$	2.15$
50 - 99	2.10$	2.10$
100 - 249	2.05$	2.05$
250 - 2379	1.70$	1.70$

Quantity	U.P
1 - 4	2.53$	2.53$
5 - 9	2.40$	2.40$
10 - 24	2.27$	2.27$
25 - 49	2.15$	2.15$
50 - 99	2.10$	2.10$
100 - 249	2.05$	2.05$
250 - 2379	1.70$	1.70$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 2379

Set of 1

IRLR3110ZPBF. C(in): 3980pF. Cost): 170pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 34-51 ns. Type of transistor: MOSFET. Id(imp): 250A. ID (T=100°C): 45A. ID (T=25°C): 42A. Idss (max): 250uA. IDss (min): 25uA. Equivalents: IRLR3110ZPbF. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.105 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 7.2 ns. Technology: HEXFET Power MOSFET. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: ±16. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. Spec info: Ultra Low On-Resistance. Function: Ultra Low On-Resistance, Fast Switching. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 15/01/2025, 06:25.

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Delivery in 2-3 days, with postal tracking!