Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.50$ | 0.50$ |
5 - 9 | 0.48$ | 0.48$ |
10 - 24 | 0.45$ | 0.45$ |
25 - 49 | 0.43$ | 0.43$ |
50 - 99 | 0.42$ | 0.42$ |
100 - 249 | 0.41$ | 0.41$ |
250 - 358 | 0.49$ | 0.49$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.50$ | 0.50$ |
5 - 9 | 0.48$ | 0.48$ |
10 - 24 | 0.45$ | 0.45$ |
25 - 49 | 0.43$ | 0.43$ |
50 - 99 | 0.42$ | 0.42$ |
100 - 249 | 0.41$ | 0.41$ |
250 - 358 | 0.49$ | 0.49$ |
IRFD110PBF. RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: DIP4. Configuration: PCB through-hole mounting. Number of terminals: 4. Manufacturer's marking: IRFD110PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 1A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 0.6A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 6.9ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 1.3W. Housing (JEDEC standard): DIP-4. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Quantity in stock updated on 13/01/2025, 02:25.
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