IRFB9N65A

Quantity	excl. VAT	VAT incl.
1 - 4	4.24$	4.24$
5 - 9	4.03$	4.03$
10 - 24	3.82$	3.82$
25 - 36	3.60$	3.60$

Quantity	U.P
1 - 4	4.24$	4.24$
5 - 9	4.03$	4.03$
10 - 24	3.82$	3.82$
25 - 36	3.60$	3.60$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 36

Set of 1

IRFB9N65A. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: Dynamic dv/dt Rating. ID (T=100°C): 5.4A. ID (T=25°C): 8.5A. Idss (max): 8.5A. Pd (Power Dissipation, Max): 167W. On-resistance Rds On: 0.93 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 650V. Quantity in stock updated on 13/01/2025, 02:25.

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Delivery in 2-3 days, with postal tracking!