Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.84$ | 0.84$ |
25 - 49 | 0.79$ | 0.79$ |
50 - 99 | 0.77$ | 0.77$ |
100 - 249 | 0.76$ | 0.76$ |
250 - 813 | 0.89$ | 0.89$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.89$ | 0.89$ |
10 - 24 | 0.84$ | 0.84$ |
25 - 49 | 0.79$ | 0.79$ |
50 - 99 | 0.77$ | 0.77$ |
100 - 249 | 0.76$ | 0.76$ |
250 - 813 | 0.89$ | 0.89$ |
IRF520NPBF. Housing: TO-220AB. Manufacturer's marking: IRF520NPBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 9.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 5.7A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 4.5 ns. Switch-off delay tf[nsec.]: 32 ns. Ciss Gate Capacitance [pF]: 330pF. Maximum dissipation Ptot [W]: 48W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 9.7A. Power: 48W. On-resistance Rds On: 0.20 Ohms. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 100V. Quantity in stock updated on 12/01/2025, 09:25.
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