Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.87$ | 0.87$ |
10 - 24 | 0.82$ | 0.82$ |
25 - 49 | 0.78$ | 0.78$ |
50 - 99 | 0.76$ | 0.76$ |
100 - 249 | 0.74$ | 0.74$ |
250 - 669 | 0.75$ | 0.75$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.91$ | 0.91$ |
5 - 9 | 0.87$ | 0.87$ |
10 - 24 | 0.82$ | 0.82$ |
25 - 49 | 0.78$ | 0.78$ |
50 - 99 | 0.76$ | 0.76$ |
100 - 249 | 0.74$ | 0.74$ |
250 - 669 | 0.75$ | 0.75$ |
IRF510PBF. Manufacturer's marking: IRF510PBF. Drain-source voltage Uds [V]: 100V. Drain Current Id [A] @ 25°C: 5.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.54 Ohms @ 3.4A. Gate breakdown voltage Ugs [V]: 4 v. Switch-on time ton [nsec.]: 7 ns. Switch-off delay tf[nsec.]: 15 ns. Ciss Gate Capacitance [pF]: 180pF. Maximum dissipation Ptot [W]: 43W. Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 5.6A. Power: 43W. On-resistance Rds On: 0.54 Ohms. Housing: TO-220. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Drain-source voltage (Vds): 100V. Quantity in stock updated on 12/01/2025, 10:25.
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