Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.86$ | 2.86$ |
5 - 9 | 2.72$ | 2.72$ |
10 - 24 | 2.57$ | 2.57$ |
25 - 49 | 2.43$ | 2.43$ |
50 - 99 | 2.37$ | 2.37$ |
100 - 249 | 2.18$ | 2.18$ |
250 - 1062 | 2.10$ | 2.10$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.86$ | 2.86$ |
5 - 9 | 2.72$ | 2.72$ |
10 - 24 | 2.57$ | 2.57$ |
25 - 49 | 2.43$ | 2.43$ |
50 - 99 | 2.37$ | 2.37$ |
100 - 249 | 2.18$ | 2.18$ |
250 - 1062 | 2.10$ | 2.10$ |
IRF4905SPBF. RoHS: yes. Component family: MOSFET, P-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: F4905S. Drain-source voltage Uds [V]: -55V. Drain Current Id [A] @ 25°C: -64A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.02 Ohms @ -38A. Gate breakdown voltage Ugs [V]: -4V. Switch-on time ton [nsec.]: 20 ns. Switch-off delay tf[nsec.]: 51 ns. Ciss Gate Capacitance [pF]: 3500pF. Maximum dissipation Ptot [W]: 150W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 55V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Quantity in stock updated on 12/01/2025, 09:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.