IRF3711ZS

IRF3711ZS. C(in): 2150pF. Cost): 680pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 16 ns. Type of transistor: MOSFET. Function: High Frequency Synchronous Buck. Id(imp): 380A. ID (T=100°C): 65A. ID (T=25°C): 92A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 2. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.0048 Ohm. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 15 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 20V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.45V. Vgs(th) min.: 1.55V. G-S Protection: no. Quantity in stock updated on 12/01/2025, 10:25.