IRF3711S

Quantity	excl. VAT	VAT incl.
1 - 4	2.43$	2.43$
5 - 9	2.31$	2.31$
10 - 24	2.19$	2.19$
25 - 39	2.06$	2.06$

Quantity	U.P
1 - 4	2.43$	2.43$
5 - 9	2.31$	2.31$
10 - 24	2.19$	2.19$
25 - 39	2.06$	2.06$

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Quantity in stock : 39

Set of 1

IRF3711S. C(in): 2980pF. Cost): 1770pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 48 ns. Type of transistor: MOSFET. Function: High Frequency Isolated DC-DC. Id(imp): 440A. ID (T=100°C): 69A. ID (T=25°C): 110A. Idss (max): 100uA. IDss (min): 20uA. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 4.7M Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 12 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 20V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. G-S Protection: no. Quantity in stock updated on 12/01/2025, 09:25.

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Delivery in 2-3 days, with postal tracking!