IGBT transistor FGA40N65SMD-DIóDA
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 13.27$ | 13.27$ |
| 2 - 2 | 12.61$ | 12.61$ |
| 3 - 4 | 12.34$ | 12.34$ |
| 5 - 9 | 11.94$ | 11.94$ |
| 10 - 14 | 11.68$ | 11.68$ |
| 15 - 19 | 11.28$ | 11.28$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 13.27$ | 13.27$ |
| 2 - 2 | 12.61$ | 12.61$ |
| 3 - 4 | 12.34$ | 12.34$ |
| 5 - 9 | 11.94$ | 11.94$ |
| 10 - 14 | 11.68$ | 11.68$ |
| 15 - 19 | 11.28$ | 11.28$ |
IGBT transistor FGA40N65SMD-DIóDA. IGBT transistor. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-3PN. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: FGA40N65SMD. Collector-emitter voltage Uce [V]: 650V. Collector current Ic [A]: 40A. Maximum collector current (A): 60.4k Ohms. Switch-on time ton [nsec.]: 16 ns. Switch-off delay tf[nsec.]: 120ns. Gate breakdown voltage Ugs [V]: 6V. Maximum dissipation Ptot [W]: 174W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +175°C. Original product from manufacturer Onsemi. Quantity in stock updated on 31/05/2025, 22:25.
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