FQU11P06

Quantity	excl. VAT	VAT incl.
1 - 4	1.60$	1.60$
5 - 9	1.52$	1.52$
10 - 24	1.44$	1.44$
25 - 33	1.36$	1.36$

Quantity	U.P
1 - 4	1.60$	1.60$
5 - 9	1.52$	1.52$
10 - 24	1.44$	1.44$
25 - 33	1.36$	1.36$

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Quantity in stock : 33

Set of 1

FQU11P06. C(in): 420pF. Cost): 195pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 83 ns. Type of transistor: MOSFET. Id(imp): 37.6A. ID (T=100°C): 5.95A. ID (T=25°C): 9.4A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.15 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 6.5 ns. Technology: DMOS POWER-MOSFET. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Operating temperature: -55...+150°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 30 v. Vgs(th) min.: 3V. Number of terminals: 3. Quantity per case: 1. Function: QFET, Low gate charge (typ--13ns). Spec info: Low Crss (typical 45pF), Fast switching. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.

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Delivery in 2-3 days, with postal tracking!