FQT1N60CTF

Quantity	excl. VAT	VAT incl.
1 - 4	2.92$	2.92$
5 - 9	2.78$	2.78$
10 - 22	2.63$	2.63$

Quantity	U.P
1 - 4	2.92$	2.92$
5 - 9	2.78$	2.78$
10 - 22	2.63$	2.63$

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Quantity in stock : 22

Set of 1

FQT1N60CTF. C(in): 130pF. Cost): 19pF. Channel type: N. Trr Diode (Min.): 190 ns. Type of transistor: MOSFET. Idss (max): 250uA. IDss (min): 25uA. Marking on the case: FQT1N60C. Pd (Power Dissipation, Max): 2.1W. On-resistance Rds On: 9.3 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 13 ns. Td(on): 7 ns. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 4. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.

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Delivery in 2-3 days, with postal tracking!