FQPF85N06

FQPF85N06. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Id(imp): 212A. ID (T=100°C): 37.5A. ID (T=25°C): 53A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 62W. On-resistance Rds On: 0.008 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 170 ns. Td(on): 40 ns. Technology: DMOS, QFET MOSFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. Function: Fast switch, Low gate charge 17nC, Low Crss 5.6pF. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.