FQPF10N60C

FQPF10N60C. C(in): 1570pF. Cost): 166pF. Channel type: N. Trr Diode (Min.): 420 ns. Type of transistor: MOSFET. Id(imp): 38A. ID (T=100°C): 5.7A. ID (T=25°C): 9.5A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 50W. On-resistance Rds On: 0.6 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 144 ns. Td(on): 23 ns. Technology: DMOS, QFET. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Operating temperature: -55...+150°C. Voltage Vds(max): 600V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Function: Fast switch, Low gate charge 44nC, Low Crss 18pF. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.