FQP85N06

Quantity	excl. VAT	VAT incl.
1 - 4	3.76$	3.76$
5 - 9	3.58$	3.58$
10 - 24	3.39$	3.39$
25 - 27	3.20$	3.20$

Quantity	U.P
1 - 4	3.76$	3.76$
5 - 9	3.58$	3.58$
10 - 24	3.39$	3.39$
25 - 27	3.20$	3.20$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 27

Set of 1

FQP85N06. C(in): 3170pF. Cost): 1150pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 300A. ID (T=100°C): 60A. ID (T=25°C): 85A. Idss (max): 10uA. IDss (min): 1uA. Pd (Power Dissipation, Max): 160W. On-resistance Rds On: 0.008 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 175 ns. Td(on): 40 ns. Technology: DMOS, QFET® MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -55...+175°C. Voltage Vds(max): 60V. Gate/source voltage Vgs: 25V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no. Quantity in stock updated on 11/01/2025, 23:25.

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Delivery in 2-3 days, with postal tracking!