B1000S1500, 1.5A, 1000V. Forward current (AV): 1.5A. VRRM: 1000V. Assembly/installation: surface-mounted component (SMD). Dielectric structure: Diode bridge. Forward voltage Vf (min): 1.1V. Housing (according to data sheet): SMD-4. Housing: SMD. IFSM: 50A. MRI (max): 500uA. MRI (min): 5uA. Number of terminals: 4. Operating temperature: -55...+150°C. Pitch: 5.2mm. Quantity per case: 4. RoHS: yes. Semiconductor material: silicon. Threshold voltage Vf (max): 1.1V. Original product from manufacturer: Taiwan Semiconductor. Quantity in stock updated on 10/31/2025, 07:09