Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.85$ | 0.85$ |
5 - 9 | 0.81$ | 0.81$ |
10 - 24 | 0.77$ | 0.77$ |
25 - 49 | 0.73$ | 0.73$ |
50 - 99 | 0.71$ | 0.71$ |
100 - 189 | 0.63$ | 0.63$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.85$ | 0.85$ |
5 - 9 | 0.81$ | 0.81$ |
10 - 24 | 0.77$ | 0.77$ |
25 - 49 | 0.73$ | 0.73$ |
50 - 99 | 0.71$ | 0.71$ |
100 - 189 | 0.63$ | 0.63$ |
BYW36. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 200 ns. Semiconductor material: silicon. Function: Fast Avalanche Sinterglass Diode. Forward current (AV): 2A. IFSM: 50A. MRI (max): 46.4k Ohms. MRI (min): 1uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: SOD-57 ( Glass ). Housing (according to data sheet): SOD-57 Glass. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 0.95V. VRRM: 600V. Number of terminals: 2. Quantity per case: 1. Note: Fast rectification and switching diode. Spec info: IFSM--50Ap (tp=10ms). Quantity in stock updated on 25/12/2024, 17:25.
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