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Semiconductors Diodes Standard and Rectifier Diodes

BYV32E-200

BYV32E-200
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.30$ 1.30$
5 - 9 1.23$ 1.23$
10 - 24 1.17$ 1.17$
25 - 49 1.10$ 1.10$
50 - 99 1.08$ 1.08$
100 - 249 1.22$ 1.22$
250 - 2028 1.34$ 1.34$
Quantity U.P
1 - 4 1.30$ 1.30$
5 - 9 1.23$ 1.23$
10 - 24 1.17$ 1.17$
25 - 49 1.10$ 1.10$
50 - 99 1.08$ 1.08$
100 - 249 1.22$ 1.22$
250 - 2028 1.34$ 1.34$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2028
Set of 1

BYV32E-200. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 10A. IFSM: 125A. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms. Quantity in stock updated on 05/04/2025, 19:25.

Technical documentation

Equivalent products :

Quantity in stock : 70
MUR1620CT

MUR1620CT

Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Func...
MUR1620CT
Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
MUR1620CT
Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
Set of 1
2.23$ VAT incl.
(2.23$ excl. VAT)
2.23$
Quantity in stock : 44
MUR1660CT

MUR1660CT

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Funct...
MUR1660CT
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
MUR1660CT
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
Set of 1
2.10$ VAT incl.
(2.10$ excl. VAT)
2.10$
Quantity in stock : 2028
BYV32E-200

BYV32E-200

Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (...
BYV32E-200
Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 10A. IFSM: 125A. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
BYV32E-200
Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 10A. IFSM: 125A. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
Set of 1
1.30$ VAT incl.
(1.30$ excl. VAT)
1.30$

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