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Semiconductors Diodes Standard and Rectifier Diodes

BYV32E-200

BYV32E-200
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.30$ 1.30$
5 - 9 1.23$ 1.23$
10 - 24 1.19$ 1.19$
25 - 49 1.17$ 1.17$
50 - 99 1.14$ 1.14$
100 - 249 1.28$ 1.28$
250 - 2013 1.44$ 1.44$
Quantity U.P
1 - 4 1.30$ 1.30$
5 - 9 1.23$ 1.23$
10 - 24 1.19$ 1.19$
25 - 49 1.17$ 1.17$
50 - 99 1.14$ 1.14$
100 - 249 1.28$ 1.28$
250 - 2013 1.44$ 1.44$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2013
Set of 1

BYV32E-200. Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. RoHS: yes. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. Number of terminals: 3. Spec info: Ifsm 125A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. Original product from manufacturer Ween Semiconductors. Quantity in stock updated on 15/06/2025, 00:25.

Technical documentation

Equivalent products :

Quantity in stock : 46
MUR1620CT

MUR1620CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
MUR1620CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 200V. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. MRI (max): 250uA. MRI (min): 5uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V
Set of 1
2.23$ VAT incl.
(2.23$ excl. VAT)
2.23$
Quantity in stock : 590
MUR1660CT

MUR1660CT

Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. ...
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
MUR1660CT
Forward current (AV): 8A. IFSM: 100A. Housing: TO-220. Housing (according to data sheet): TO-220AC. VRRM: 600V. Quantity per case: 2. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Note: common cathode. MRI (max): 500uA. MRI (min): 10uA. Number of terminals: 3. RoHS: yes. Spec info: Ifsm 100Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V
Set of 1
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$
Quantity in stock : 2013
BYV32E-200

BYV32E-200

Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO...
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. RoHS: yes. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. Number of terminals: 3. Spec info: Ifsm 125A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V
BYV32E-200
Forward current (AV): 10A. IFSM: 125A. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). VRRM: 200V. RoHS: yes. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Note: common cathode. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. Number of terminals: 3. Spec info: Ifsm 125A t=10ms. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V
Set of 1
1.30$ VAT incl.
(1.30$ excl. VAT)
1.30$
Quantity in stock : 30
BYV32-200G

BYV32-200G

Packing: plastic tube. Conditioning unit: 50. Quantity per case: 2dB. Dielectric structure: Common c...
BYV32-200G
Packing: plastic tube. Conditioning unit: 50. Quantity per case: 2dB. Dielectric structure: Common cathode. Trr Diode (Min.): 35ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 8A. IFSM: 100A. Marking on the case: BYV32-200. Number of terminals: 3 pieces. ROHS: Yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V. VRRM: 200V
BYV32-200G
Packing: plastic tube. Conditioning unit: 50. Quantity per case: 2dB. Dielectric structure: Common cathode. Trr Diode (Min.): 35ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 8A. IFSM: 100A. Marking on the case: BYV32-200. Number of terminals: 3 pieces. ROHS: Yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V. VRRM: 200V
Set of 1
2.76$ VAT incl.
(2.76$ excl. VAT)
2.76$

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NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 100V. Collector current: 15A. Housing: TO-3P (...
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BAT-H-SN-23

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BYV42E-150

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