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Semiconductors Diodes Standard and Rectifier Diodes

BYV32E-200

BYV32E-200
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.30$ 1.30$
5 - 9 1.23$ 1.23$
10 - 24 1.17$ 1.17$
25 - 49 1.10$ 1.10$
50 - 99 1.08$ 1.08$
100 - 249 1.22$ 1.22$
250 - 2229 1.34$ 1.34$
Quantity U.P
1 - 4 1.30$ 1.30$
5 - 9 1.23$ 1.23$
10 - 24 1.17$ 1.17$
25 - 49 1.10$ 1.10$
50 - 99 1.08$ 1.08$
100 - 249 1.22$ 1.22$
250 - 2229 1.34$ 1.34$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2229
Set of 1

BYV32E-200. Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 10A. IFSM: 125A. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms. Quantity in stock updated on 25/12/2024, 16:25.

Technical documentation

Equivalent products :

Quantity in stock : 89
MUR1620CT

MUR1620CT

Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Func...
MUR1620CT
Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
MUR1620CT
Dielectric structure: common cathode. Trr Diode (Min.): 35 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 250uA. MRI (min): 5uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.975V. Forward voltage Vf (min): 0.895V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Spec info: Ifsm 100Ap
Set of 1
2.23$ VAT incl.
(2.23$ excl. VAT)
2.23$
Quantity in stock : 608
MUR1660CT

MUR1660CT

Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Funct...
MUR1660CT
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
MUR1660CT
Dielectric structure: Anode-Cathode. Trr Diode (Min.): 60 ns. Semiconductor material: silicon. Function: Ultrafast SMPS. Forward current (AV): 8A. IFSM: 100A. MRI (max): 500uA. MRI (min): 10uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AC. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.2V. VRRM: 600V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 100Ap
Set of 1
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$
Quantity in stock : 2229
BYV32E-200

BYV32E-200

Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (...
BYV32E-200
Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 10A. IFSM: 125A. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
BYV32E-200
Conditioning: plastic tube. Conditioning unit: 50. Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 10A. IFSM: 125A. Marking on the case: BYV32E-200. Equivalents: BYV32-200G, BYV32E-200.127, BYV32-200-E3/45. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): SOT78 (TO-220AB). Operating temperature: -65...+175°C. Threshold voltage Vf (max): 0.85V. Forward voltage Vf (min): 0.72V. VRRM: 200V. Quantity per case: 2. Number of terminals: 3. Note: common cathode. Spec info: Ifsm 125A t=10ms
Set of 1
1.30$ VAT incl.
(1.30$ excl. VAT)
1.30$
Quantity in stock : 30
BYV32-200G

BYV32-200G

Packing: plastic tube. Conditioning unit: 50. Quantity per case: 2dB. Dielectric structure: Common c...
BYV32-200G
Packing: plastic tube. Conditioning unit: 50. Quantity per case: 2dB. Dielectric structure: Common cathode. Trr Diode (Min.): 35ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 8A. IFSM: 100A. Marking on the case: BYV32-200. Number of terminals: 3 pieces. ROHS: Yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V. VRRM: 200V
BYV32-200G
Packing: plastic tube. Conditioning unit: 50. Quantity per case: 2dB. Dielectric structure: Common cathode. Trr Diode (Min.): 35ns. Semiconductor material: silicon. Function: ULTRA FAST. Forward current (AV): 8A. IFSM: 100A. Marking on the case: BYV32-200. Number of terminals: 3 pieces. ROHS: Yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.01V. Forward voltage Vf (min): 0.74V. VRRM: 200V
Set of 1
2.76$ VAT incl.
(2.76$ excl. VAT)
2.76$

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BDW84C

BDW84C

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Funct...
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BOX-M235-150-08

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Material: Aluminum/steel. Interior dimensions: 228x142x76mm. Function: enclosure for electronic inst...
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BAT-H-SN-23

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MBR10100

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BYV42E-150

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Dielectric structure: common cathode. Trr Diode (Min.): 20 ns. Semiconductor material: silicon. Forw...
BYV42E-150
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SW18200-B

SW18200-B

Note: 7mm button. Switch mode: 2x ON-ON. Configuration: ON-ON. Switch type: slide switch. Number of ...
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FEP16JT

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BYV34-500-127

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BAT-H-SN-18

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Note: side by side. Note: 4xAA. Note: flat mount...
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BAT-H-SN-10

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