BU2520DF-PHI

Quantity	excl. VAT	VAT incl.
1 - 4	2.76$	2.76$
5 - 9	2.63$	2.63$
10 - 24	2.49$	2.49$
25 - 49	2.35$	2.35$
50 - 99	2.29$	2.29$
100 - 249	2.24$	2.24$
250 - 311	2.13$	2.13$

Quantity	U.P
1 - 4	2.76$	2.76$
5 - 9	2.63$	2.63$
10 - 24	2.49$	2.49$
25 - 49	2.35$	2.35$
50 - 99	2.29$	2.29$
100 - 249	2.24$	2.24$
250 - 311	2.13$	2.13$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 311

Set of 1

BU2520DF-PHI. Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 13. Minimum hFE gain: 5. Collector current: 10A. Ic(pulse): 25A. Note: Insulation voltage 2500V. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 45W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.5us. Tf(min): 0.35us. Housing: SOT-199. Housing (according to data sheet): SOT-199. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 5V. Collector/emitter voltage Vceo: 800V. Vebo: 13.5V. Function: High-voltage, high-speed switching. Spec info: Switching times (16kHz line deflection circuit). Quantity in stock updated on 11/01/2025, 08:25.

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Delivery in 2-3 days, with postal tracking!