BC639-16-CDIL

Quantity	excl. VAT	VAT incl.
1 - 9	0.23$	0.23$
10 - 24	0.22$	0.22$
25 - 49	0.21$	0.21$
50 - 99	0.20$	0.20$
100 - 228	0.19$	0.19$

Quantity	U.P
1 - 9	0.23$	0.23$
10 - 24	0.22$	0.22$
25 - 49	0.21$	0.21$
50 - 99	0.20$	0.20$
100 - 228	0.19$	0.19$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 228

Set of 1

BC639-16-CDIL. C(in): 50pF. Cost): 7pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Pd (Power Dissipation, Max): 800mW. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC640-16. BE diode: no. CE diode: no. Quantity in stock updated on 10/01/2025, 04:25.

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Delivery in 2-3 days, with postal tracking!