Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.88$ | 0.88$ |
2 - 2 | 0.84$ | 0.84$ |
3 - 4 | 0.79$ | 0.79$ |
5 - 9 | 0.75$ | 0.75$ |
10 - 24 | 0.70$ | 0.70$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 366 | 0.57$ | 0.57$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.88$ | 0.88$ |
2 - 2 | 0.84$ | 0.84$ |
3 - 4 | 0.79$ | 0.79$ |
5 - 9 | 0.75$ | 0.75$ |
10 - 24 | 0.70$ | 0.70$ |
25 - 49 | 0.61$ | 0.61$ |
50 - 366 | 0.57$ | 0.57$ |
BC33740. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 630. Minimum hFE gain: 250. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92Ammo-Pack. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-40. BE diode: no. CE diode: no. Quantity in stock updated on 09/01/2025, 08:25.
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