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BC33716

BC33716
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.06$ 1.06$
2 - 2 1.01$ 1.01$
3 - 4 0.96$ 0.96$
5 - 9 0.90$ 0.90$
10 - 24 0.85$ 0.85$
25 - 49 0.80$ 0.80$
50 - 196 0.67$ 0.67$
Quantity (Set of 10) U.P
1 - 1 1.06$ 1.06$
2 - 2 1.01$ 1.01$
3 - 4 0.96$ 0.96$
5 - 9 0.90$ 0.90$
10 - 24 0.85$ 0.85$
25 - 49 0.80$ 0.80$
50 - 196 0.67$ 0.67$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 1951
Set of 10

BC33716. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-16. BE diode: no. CE diode: no. Quantity in stock updated on 09/01/2025, 08:25.

Equivalent products :

Quantity in stock : 2100
BC337-25

BC337-25

Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. ...
BC337-25
Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
BC337-25
Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. Minimum hFE gain: 100. Collector current: 0.8A. Ic(pulse): 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-25. BE diode: no. CE diode: no
Set of 10
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Quantity in stock : 15515
BC337-40

BC337-40

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: ...
BC337-40
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-40
BC337-40
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC337-40. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC327-40
Set of 10
0.71$ VAT incl.
(0.71$ excl. VAT)
0.71$

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Quantity in stock : 27855
BC327-40

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RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: ...
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BC337-25

BC337-25

Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 210 MHz. Max hFE gain: 630. ...
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BC557B

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RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: ...
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BC547B

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CFR1-4W-220K

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BC327-25

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Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: hFE 160-4...
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ELC220UF35P-105ESR-H

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DC voltage: 35V. Capacitance: 220uF. Diameter: 10mm. Lifespan: 5000 hours. Lenght: 16mm. Impedance: ...
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