Quantity | excl. VAT | VAT incl. |
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1 - 3 | 4.89$ | 4.89$ |
Quantity | U.P | |
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1 - 3 | 4.89$ | 4.89$ |
2SD1669. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: switching circuits. Max hFE gain: 280. Minimum hFE gain: 70. Collector current: 12A. Id(imp): 15A. Note: complementary transistor (pair) 2SB1136. Pd (Power Dissipation, Max): 30W. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Quantity in stock updated on 29/12/2024, 19:25.
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