Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.62$ | 3.62$ |
5 - 9 | 3.43$ | 3.43$ |
10 - 24 | 3.25$ | 3.25$ |
25 - 49 | 3.07$ | 3.07$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.62$ | 3.62$ |
5 - 9 | 3.43$ | 3.43$ |
10 - 24 | 3.25$ | 3.25$ |
25 - 49 | 3.07$ | 3.07$ |
2SD1668. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: switching circuits. Max hFE gain: 280. Minimum hFE gain: 70. Collector current: 7A. Id(imp): 12A. Note: complementary transistor (pair) 2SB1135. Pd (Power Dissipation, Max): 30W. Housing: TO-220FP. Housing (according to data sheet): TO-220ML. Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Quantity in stock updated on 29/12/2024, 20:25.
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