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2SB1243

2SB1243
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Quantity excl. VAT VAT incl.
1 - 4 4.62$ 4.62$
5 - 6 4.39$ 4.39$
Quantity U.P
1 - 4 4.62$ 4.62$
5 - 6 4.39$ 4.39$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 6
Set of 1

2SB1243. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Collector current: 3A. Ic(pulse): 4.5A. Marking on the case: B1243 (RN). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Quantity in stock updated on 25/12/2024, 05:25.

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