Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.62$ | 4.62$ |
5 - 6 | 4.39$ | 4.39$ |
Quantity | U.P | |
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1 - 4 | 4.62$ | 4.62$ |
5 - 6 | 4.39$ | 4.39$ |
2SB1243. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Max hFE gain: 390. Minimum hFE gain: 82. Collector current: 3A. Ic(pulse): 4.5A. Marking on the case: B1243 (RN). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial planar type'. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): ATV. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Quantity in stock updated on 25/12/2024, 05:25.
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