SS36-E3

Quantity	excl. VAT	VAT incl.
1 - 9	0.44$	0.44$
10 - 24	0.41$	0.41$
25 - 49	0.39$	0.39$
50 - 99	0.37$	0.37$
100 - 249	0.36$	0.36$
250 - 499	0.32$	0.32$
500 - 816	0.30$	0.30$

Quantity	U.P
1 - 9	0.44$	0.44$
10 - 24	0.41$	0.41$
25 - 49	0.39$	0.39$
50 - 99	0.37$	0.37$
100 - 249	0.36$	0.36$
250 - 499	0.32$	0.32$
500 - 816	0.30$	0.30$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 816

Set of 1

SS36-E3. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 3A. IFSM: 100A. MRI (max): 10mA. MRI (min): 500uA. Marking on the case: SS36. Equivalents: SS36-E3/9AT. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: DO-214. Housing (according to data sheet): DO-214AB (SMA) 7.11x6.22mm. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.75V. Forward voltage Vf (min): 0.75V. VRRM: 60V. Number of terminals: 2. Function: Schottky Barrier Rectifier Diode, Surface Mount. Spec info: Ifsm 100Ap (t=8.3ms). Quantity in stock updated on 25/12/2024, 05:25.

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Delivery in 2-3 days, with postal tracking!