SI4435DDY-T1-GE3
Quantity
Unit price
5-9
1.10$
10-49
1.06$
50-199
0.95$
200-999
0.88$
1000+
0.80$
| Quantity in stock: 191 |
SI4435DDY-T1-GE3. Features: -. Gate/source voltage Vgs max: -20V. Housing: SO8. Id @ Tc=25°C (Continuous Drain Current): 11.4A. Information: -. MSL: -. Mounting Type: SMD. Pd (Power Dissipation, Max): 5W. Polarity: MOSFET P. Series: TrenchFET. Vdss (Drain to Source Voltage): -30V. Original product from manufacturer: Vishay Siliconix. Minimum quantity: 5. Quantity in stock updated on 11/01/2025, 18:37
SI4435DDY-T1-GE3
10 parameters
Gate/source voltage Vgs max
-20V
Housing
SO8
Id @ Tc=25°C (Continuous Drain Current)
11.4A
Mounting Type
SMD
Pd (Power Dissipation, Max)
5W
Polarity
MOSFET P
Series
TrenchFET
Vdss (Drain to Source Voltage)
-30V
Original product from manufacturer
Vishay Siliconix
Minimum quantity
5