SI2333CDS-T1-E3
Quantity
Unit price
5-9
0.92$
10-49
0.82$
50-199
0.74$
200-2999
0.69$
3000+
0.54$
| Quantity in stock: 2925 |
SI2333CDS-T1-E3. Features: -. Gate/source voltage Vgs max: ±8V. Id @ Tc=25°C (Continuous Drain Current): 7.1A. Information: -. MSL: -. Mounting Type: Surface Mount. Polarity: MOSFET P. Series: TrenchFET. Vdss (Drain to Source Voltage): 12V. Original product from manufacturer: Vishay Siliconix. Minimum quantity: 5. Quantity in stock updated on 11/01/2025, 18:37
SI2333CDS-T1-E3
8 parameters
Gate/source voltage Vgs max
±8V
Id @ Tc=25°C (Continuous Drain Current)
7.1A
Mounting Type
Surface Mount
Polarity
MOSFET P
Series
TrenchFET
Vdss (Drain to Source Voltage)
12V
Original product from manufacturer
Vishay Siliconix
Minimum quantity
5