Quantity | excl. VAT | VAT incl. |
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1 - 2 | 4.66$ | 4.66$ |
Quantity | U.P | |
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1 - 2 | 4.66$ | 4.66$ |
RH4F. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4us. Semiconductor material: silicon. Function: 'damper'. Forward current (AV): 2.5A. IFSM: 50A. Note: Samsung--0402-000266. Number of terminals: 2. Assembly/installation: PCB through-hole mounting. Housing: DO-201. Housing (according to data sheet): DO-201 ( 6.5x8.0mm ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.5V. VRRM: 1500V. Quantity in stock updated on 26/12/2024, 03:25.
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