Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.74$ | 1.74$ |
5 - 9 | 1.66$ | 1.66$ |
10 - 24 | 1.57$ | 1.57$ |
25 - 49 | 1.48$ | 1.48$ |
50 - 57 | 1.45$ | 1.45$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.74$ | 1.74$ |
5 - 9 | 1.66$ | 1.66$ |
10 - 24 | 1.57$ | 1.57$ |
25 - 49 | 1.48$ | 1.48$ |
50 - 57 | 1.45$ | 1.45$ |
RF2001T3D. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 25 ns. Semiconductor material: silicon. Forward current (AV): 20A. IFSM: 100A. MRI (max): 10uA. Number of terminals: 3. Temperature: +150°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220FN. Threshold voltage Vf (max): 1.3V. VRRM: 350V. Function: Fast switching, Fast recovery diode. Spec info: IFMS 100Ap. Quantity in stock updated on 12/01/2025, 21:25.
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