Phototransistors and photodiodes (receiving)

RoHS: yes. Component family: Photo Transistor. Housing: PCB soldering. Housing: rectangular, 5.08x4.44mm. Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 880nm. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 1.5mA. Half detection angle δ 1/2 [°]: ±25°. Switch-on time tr [µsec.]: 8us. Switch-off delay tf [µsec.]: 8us. Outer length [mm]: 5.08mm. Outer width [mm]: 4.44mm. External thickness [mm]: 2.54mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C

RoHS: yes. Component family: PIN Photodiode. Housing: PCB soldering. Housing: 5mm (T-1 3/4). Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 850nm. Closing voltage Ur[V], max.: 20V. Make current, dark current Ir [µA]: 5nA. Half detection angle δ 1/2 [°]: ±20°. Switch-on time tr [µsec.]: 5 ns. Switch-off delay tf [µsec.]: 5 ns. Outside diameter [mm]: 5mm. Outer length [mm]: 9mm. Outer width [mm]: 5.1mm. External thickness [mm]: 5.1mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C

RoHS: yes. Component family: PIN Photodiode. Housing: PCB soldering. Housing: 5mm (T-1 3/4). Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 900nm. Closing voltage Ur[V], max.: 20V. Make current, dark current Ir [µA]: 5nA. Half detection angle δ 1/2 [°]: ±20°. Switch-on time tr [µsec.]: 5 ns. Switch-off delay tf [µsec.]: 5 ns. Outside diameter [mm]: 5mm. Outer length [mm]: 9mm. Outer width [mm]: 5.1mm. External thickness [mm]: 5.1mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C

RoHS: no. Component family: PIN Photodiode. Housing: PCB soldering. Housing: 5mm (T-1 3/4). lapos. Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 850nm. Closing voltage Ur[V], max.: 20V. Make current, dark current Ir [µA]: 10nA. Half detection angle δ 1/2 [°]: ±75°. Switch-on time tr [µsec.]: 5 ns. Switch-off delay tf [µsec.]: 5 ns. Outside diameter [mm]: 5mm. Outer length [mm]: 5mm. Outer width [mm]: 5.9mm. External thickness [mm]: 5.9mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C

RoHS: yes. Component family: PIN Photodiode. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 900nm. Closing voltage Ur[V], max.: 32V. Make current, dark current Ir [µA]: 30nA. Half detection angle δ 1/2 [°]: ±60°. Switch-on time tr [µsec.]: 20 ns. Switch-off delay tf [µsec.]: 20 ns. Outside diameter [mm]: 5.1mm. Outer length [mm]: 6.9mm. Outer width [mm]: 5.1mm. External thickness [mm]: 5.1mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C

Note: 860nm 24°

RoHS: yes. Component family: Photo Transistor. Housing: PCB soldering. Housing: 3mm (T-1). Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 860nm. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 15mA. Half detection angle δ 1/2 [°]: ±12°. Switch-on time tr [µsec.]: 8us. Switch-off delay tf [µsec.]: 8us. Outside diameter [mm]: 3mm. Outer length [mm]: 5.2mm. Outer width [mm]: 4mm. External thickness [mm]: 4mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C

Component family: infrared phototransistor. Wavelength: 730-1120nm. Detection angle: 24°

RoHS: yes. Component family: Photo Transistor. Housing: PCB soldering. Housing: 3mm (T-1). Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 900nm. Collector-emitter voltage Uceo [V]: 35V. Collector current Ic [A], max.: 15mA. Half detection angle δ 1/2 [°]: ±12°. Switch-on time tr [µsec.]: 7us. Switch-off delay tf [µsec.]: 7us. Outside diameter [mm]: 3mm. Outer length [mm]: 5.2mm. Outer width [mm]: 4mm. External thickness [mm]: 4mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C

Collector current: 15mA. Ic(pulse): 75mA. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: PLCC. Housing (according to data sheet): PLCC-2. Operating temperature: -40...+100°C. Collector/emitter voltage Vceo: 35V. Number of terminals: 2

RoHS: yes. Component family: Photo Transistor. Housing: PCB soldering. Housing: 3mm (T-1). Configuration: PCB through-hole mounting. Number of terminals: 2. Dominant wavelength [nm]: 570nm. Collector-emitter voltage Uceo [V]: 6V. Collector current Ic [A], max.: 20mA. Half detection angle δ 1/2 [°]: ±30°. Outside diameter [mm]: 3mm. Outer length [mm]: 4.4mm. Outer width [mm]: 3.2mm. External thickness [mm]: 3.2mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +85°C

RoHS: yes. Component family: Photo Transistor. Housing: PCB soldering (SMD). Housing: 3.5x2.8x1.75mm. Configuration: surface-mounted component (SMD). Number of terminals: 2. Dominant wavelength [nm]: 940nm. Collector-emitter voltage Uceo [V]: 70V. Collector current Ic [A], max.: 50mA. Half detection angle δ 1/2 [°]: ±60°. Switch-on time tr [µsec.]: 6us. Switch-off delay tf [µsec.]: 6us. Outer length [mm]: 3.5mm. Outer width [mm]: 2.8mm. External thickness [mm]: 1.75mm. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +100°C